Tunable thin film capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S295000, C257S310000

Reexamination Certificate

active

07012317

ABSTRACT:
It is an object of the invention to provide a variable capacitor constituted such that, even when an external control voltage is applied, a stable dielectric constant of the dielectric layer can be obtained. A variable capacitor constituted such that a dielectric layer whose dielectric constant is changed by the application of an external voltage is held between an upper electrode layer and a lower electrode layer, wherein a plurality of capacitance-producing regions a, b are connected to each other.

REFERENCES:
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patent: 6100773 (2000-08-01), Nakamichi et al.
patent: 08-241830 (1996-09-01), None
patent: 09-031645 (1997-02-01), None
patent: 09-260603 (1997-10-01), None
patent: 11-003839 (1999-01-01), None
patent: 11-260667 (1999-09-01), None
A. Walkenhorst et al., “Dielectric properties of SrTiO3 thin films used in high Tc superconducting field-effect devices”, Appl. Physics Lett. 60 (14), Apr. 6, 1992, USA; pp. 1744-1746.
Cem Basceri, et al., “The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr) Ti03 thin films grown by chemical vapor depsoition.” Appl .Physics 82 (5), Sep. 1, 1997, USA; pp.2497-2504.
W. Chang, et al., “The effect of (Ba, Sr) and (Mn, Fe, W) Dopants on the microwave properties of BaxSr1-xTio3 thin films” Mat. Res. Soc. Symp. Proc. vol. 541, 1999, USA, pp. 699-704.

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