Tunable semiconductor laser on a semi-insulating substrate

Details Tunable semiconductor laser on a semi-insulating substrate Tunable semiconductor laser on a semi-insulating substrate

1992-04-23

1993-11-09

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 20, 372 45, H01S 319

Patent

active

052609600

ABSTRACT:
A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.

REFERENCES:
patent: 5027363 (1991-06-01), Takahashi
patent: 5048049 (1991-09-01), Amann
patent: 5073895 (1991-12-01), Omura
patent: 5155560 (1992-10-01), Sheperd
"Fabrication and lasing characteristics of .lambda.=1.56 .mu.m tunable twin-guide (TTG) DFB lasers", C. F. J. Schanen et al., IEEE Proceedings-J, vol. 137, No. 1, Feb. 1990, pp. 69-73.

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