Tunable semiconductor laser and production method

Details Tunable semiconductor laser and production method Tunable semiconductor laser and production method

2006-06-06

2006-06-06

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular beam control device

Tuning

C372S098000, C372S102000

Reexamination Certificate

active

07058095

ABSTRACT:
A resonator structure containing an active layer is subdivided into at least two sections in which mode spacings differ from one another by 7 to 10 percent on account of different length dimensions or as a result of grating structures provided therefor. Photonic crystals are integrated as longitudinal and, if appropriate, as lateral boundaries of the resonator structure. Variation of the currents in the sections enables the laser to be tuned in a wide wavelength range.

REFERENCES:
patent: 4896325 (1990-01-01), Coldren
patent: 5365541 (1994-11-01), Bullock
patent: 5684817 (1997-11-01), Houdre et al.
patent: 6141370 (2000-10-01), Avrutsky et al.
patent: 6597721 (2003-07-01), Hutchinson et al.
patent: 94/16345 (1994-07-01), None

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