Tunable semiconductor laser and method thereof

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S029000, C438S031000

Reexamination Certificate

active

11414644

ABSTRACT:
A tunable semiconductor laser including a Fabry-Perot filter and an electrode array is disclosed. The propagation direction of the light beam in the cavity can be consecutively shifted applying electric field or current to the electrode and tuning can consecutively performed over the wide wavelength band by the consecutive shift of the angle of the intra cavity laser beam.

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patent: 7092419 (2006-08-01), Woodley et al.
Vijaysekhar Jayaraman, et al., Theory, Design, and Perfomance of Extended Tuning Range Semiconductor Lasers with Sampled Gratings, IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993.
R.C. Alferness, et al., Grating-assisted InGaAsP/InP vertical codirectional coupler filter, AT&T Bell Laboratories, Holmdel, New Jersey, published Sep. 5, 1989.
W. Idler, et al., Y Laser with 38 nm Tuning Range, Electronics Letters, Nov. 21, 1991, vol. 27, No. 24.

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