Tunable semiconductor laser

Details Tunable semiconductor laser Tunable semiconductor laser

1981-03-03

1983-07-26

Davie, James W.

Coherent light generators

Thin film laser

372 20, 372 43, H01S 318

Patent

active

043957692

ABSTRACT:
Tunable laser radiation is obtained by pumping a wedge-shaped ultra-short laser cavity with picosecond excitation pulses. Continuous tuning of the laser is achieved by translating either the wedge-shaped laser cavity or the excitation pulses so that different volumes of the laser material are exposed to the excitation pulses. In one embodiment utilizing picosecond laser excitation pulses the wedge-shaped laser cavity is a slightly wedged film of GaAs coated on both sides with dielectric mirrors.

REFERENCES:
patent: 3675151 (1972-07-01), Mack
patent: 3747021 (1973-07-01), Smiley
patent: 4187475 (1980-02-01), Wieder
Fox et al., "Modes in a Maser Interferometer with Curved and Tilted Mirrors", Proceedings of the IEEE, Jan. 1963, pp. 80-89.
Liao et al., "Magnetic Field-and Concentration-Dependent Photo Echo Relaxation in Ruby with Simple Exponential Delay", Optics Communications, vol. 8, No. 4, Aug. 1973, pp. 310-311.
Passner et al., "Ultra- Short Laser: Lasing in MBE GaAs Layer with Perpendicular-to Film Optical Excitation and Emission", Technical Memorandum, No. 79-1115-2, Jan. 3, 1979, pp. 1-11.

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