Tunable semiconductor laser

Coherent light generators – Particular resonant cavity – Distributed feedback

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H01S 308

Patent

active

051877171

ABSTRACT:
A wavelength-tunable semiconductor laser of distributed feedback (DFB) type wherein a diffraction grating having periodic corrugations along the direction of travel of light is formed on an active layer of at least one of layers adjacent thereto. An electrode on one side is separated into four or more electrodes in the direction of the cavity of the laser. Nonadjoining ones of them are electrically connected to form two electrode groups. The total length of first regions corresponding to a first one of the two electrode groups is larger than the total length of second regions corresponding to the second electrode group. The refractive indexes of the first regions are changed through current injection change to the first electrode group to vary the lasing wavelength and the gain of the second regions is controlled through current injection to the second electrode group, thereby generating output light of a constant output power and a variable single wavelength.

REFERENCES:
patent: 4829535 (1989-05-01), Utaka
patent: 4835779 (1989-05-01), Liou
patent: 4856005 (1989-08-01), Oe et al.
patent: 5012484 (1921-04-01), Flynn et al.

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