Tunable semiconductor laser

Details Tunable semiconductor laser Tunable semiconductor laser

1990-02-15

1991-04-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 20, 372 46, 372 96, H01S 319

Patent

active

050088939

ABSTRACT:
A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.

REFERENCES:
patent: 4352187 (1982-09-01), Amann
patent: 4607370 (1986-08-01), Mukai et al.
patent: 4719636 (1988-01-01), Yamaguchi
patent: 4802187 (1989-01-01), Bouley et al.
patent: 4817105 (1989-03-01), Yano
patent: 4823352 (1989-04-01), Sugimoto
patent: 4920542 (1990-04-01), Brosson et al.
Fabrication and Characteristics of MCRW GaAs/GaAlAs Lasers on Semiinsulating Substrate of Journal of Optical Communications of 1985, p. 42.
Japanese Patent Abstracts. vol. 13, No. 97, Mar. 7, 1989.

Affiliated with

Also associated with

Rating

Tunable semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tunable semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunable semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-426806