Tunable selectivity slurries in CMP applications

Details Tunable selectivity slurries in CMP applications Tunable selectivity slurries in CMP applications

2007-11-13

2007-11-13

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000

Reexamination Certificate

active

11478023

ABSTRACT:
The invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate with at least a first layer and a second layer. The method comprises providing both a first chemical-mechanical polishing composition comprising an abrasive with a selectivity for a first layer as compared to a second layer and a second chemical-mechanical polishing composition comprising an abrasive with different selectivity for the first layer as compared to the second layer, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and mixing the first and second chemical-mechanical polishing compositions in a ratio to achieve a final selectivity for the first layer as compared to the second layer. The invention further provides a method of chemically-mechanically polishing a substrate.

REFERENCES:
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5230833 (1993-07-01), Romberger et al.
patent: 5433651 (1995-07-01), Lustig et al.
patent: 5609511 (1997-03-01), Moriyama et al.
patent: 5643046 (1997-07-01), Katakabe et al.
patent: 5658183 (1997-08-01), Sandhu et al.
patent: 5730642 (1998-03-01), Sandhu et al.
patent: 5838447 (1998-11-01), Hiyama et al.
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5872633 (1999-02-01), Holzapfel et al.
patent: 5893796 (1999-04-01), Birang et al.
patent: 5949927 (1999-09-01), Tang
patent: 5958288 (1999-09-01), Mueller et al.
patent: 5964643 (1999-10-01), Birang et al.
patent: 5980775 (1999-11-01), Grumbine et al.
patent: 6015506 (2000-01-01), Streinz et al.
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6083419 (2000-07-01), Grumbine et al.
patent: 6136711 (2000-10-01), Grumbine et al.
patent: 6461230 (2002-10-01), Tsai et al.
patent: 7014699 (2006-03-01), Winter et al.
patent: 7029508 (2006-04-01), Scott et al.
patent: 2001/0037821 (2001-11-01), Staley et al.
patent: 2003/0162399 (2003-08-01), Singh
patent: 2004/0089634 (2004-05-01), Grover et al.
patent: 2004/0229461 (2004-11-01), Darsillo et al.
patent: WO 2004/031455 (2004-04-01), None
patent: WO 2004/101222 (2004-11-01), None
S.Wolf, “Silicon Processing for the VLSI Era”, 2002, Lattice Press, vol. 4, pp. 366-370.

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