Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2004-05-13
2009-12-15
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S086000, C257S103000, C257SE33008, C372S045010, C372S046010
Reexamination Certificate
active
07633081
ABSTRACT:
A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The structure is operable to emit light radiation in response to a current flow therethrough. Moreover, the elongated structure is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the structure further includes an electrode arrangement for applying an electric field to the elongated structure for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the structure in response to the current flow therethrough.
REFERENCES:
patent: 5920078 (1999-07-01), Frey
patent: 6773616 (2004-08-01), Chen et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
Bakkers Erik Petrus Antonius Maria
Grabowski Stefan Peter
Ho Tu-Tu V
Koninklijke Philips Electronics , N.V.
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