Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-02-18
1995-05-02
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 359248, 385 8, H01L 2714, H01L 3100
Patent
active
054122252
ABSTRACT:
An opto-electronic semiconductor device including a variable strained layered quantum well structure having at least two superimposed heavy- and light-hole triangular bottom valance band quantum wells with mutually opposite slopes. Upon the application of a bias potential across a thickness dimension of the quantum wells, an electric field is generated therethrough which produces an interchange of the confined energy levels of heavy-holes and light-holes in the quantum wells which causes a change in the transmission characteristics of light passing through the device as a result of the heavy- and light-hole energy bands having different light absorption anisotropy.
REFERENCES:
patent: 4904859 (1990-02-01), Goossen et al.
patent: 4952792 (1990-08-01), Caridi
patent: 5001522 (1991-03-01), Takahashi et al.
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5090790 (1992-02-01), Zucker
patent: 5117469 (1992-05-01), Cheung et al.
patent: 5274247 (1993-12-01), Dutta et al.
patent: 5313073 (1994-05-01), Kuroda et al.
"Biaxial and uniaxial stress in gallium arsenide on silicon: A linear polzed photoluminescence study", H. Shen et al, Journal of Applied Physics, vol. 68(1), pp. 369-371, Jul. 1, 1990.
"Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/Si", D. A. Rich et al, Physical Review B, The American Physical Society, vol. 43, No. 8, pp. 6836-6839, Mar. 15, 1991.
"Electric field dependence of optical absorption near the band gap of quantum-well structures", Physical Review B, The American Physical Society, vol. 32, No. 2, pp. 1043-1060, 1985.
Dutta Mitra
Pamulapati Jagadeesh
Shen Hongen
Zhou Weimin
Anderson William H.
Crane Sara W.
The United States of America as represented by the Secretary of
Zelenka Michael
LandOfFree
Tunable heavy and light hole coupled bands in variable-strain qu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tunable heavy and light hole coupled bands in variable-strain qu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tunable heavy and light hole coupled bands in variable-strain qu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1139414