Tunable field plate

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257488, 257630, 257921, H01L 2714

Patent

active

059988509

ABSTRACT:
First and second semiconductor devices are separated by a field oxide on a semiconductor substrate, and a field plate is positioned over the field oxide. A leakage detector detects a field leakage current between the first and second semiconductor devices. A field plate generator tunes a potential of said field plate according to a magnitude of the field current detected by the leakage current detector. In this manner, field leakage is optimized, and total dose effects may be monitored for signs of device failure.

REFERENCES:
patent: 3896309 (1975-07-01), Halsor et al.
patent: 4785343 (1988-11-01), Nezu
patent: 4825278 (1989-04-01), Hillenius et al.
patent: 4937756 (1990-06-01), Hsu et al.
patent: 5332903 (1994-07-01), Buehler et al.

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