Tunable, dielectric-resonator-stabilized oscillator and method o

Oscillators – With distributed parameter resonator

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331107DP, 331117D, 333231, 333235, H03B 518, H01P 710

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active

046396900

ABSTRACT:
A dielectric-resonator-stabilized, Gallium-Arsenide-FET, negative resistance oscillator operating in the microwave region incorporating an improved form of dielectric resonator whose resonant frequency is tuned by the addition or removal of metal from the surface of a dielectric tuning plate in the resonator, and a method for tuning the oscillator to the desired frequency range with the resonator in place by use of a laser-trimming device are disclosed.

REFERENCES:
patent: 4484156 (1984-11-01), Khanna et al.
patent: 4562370 (1985-12-01), Von Dach
Golio, J. M., "New Approach for FET Oscillator Design", Microwave Journal, Oct. 1978, pp. 59-61.
Wagner, W., "Oscillator Design by Device Line Measurement", Microwave Journal, Feb. 1979, pp. 43-48.
Hamilton, S., "Microwave Oscillator Circuits", Microwave Journal, Apr. 1978, pp. 63-66, 83.
Hiroyuki, A., et al, "A Highly-Stabilized Low-Noise GaAs FET . . . ", IEEE Trans., vol. MTT-26, No. 3, Mar. 1978, pp. 156-162.

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