Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2005-02-22
2005-02-22
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S087000, C117S104000, C117S929000, C423S446000
Reexamination Certificate
active
06858080
ABSTRACT:
Monocrystalline diamond, adapted for use as in applications such as semiconductor devices, optical waveguides, and industrial applications, in the form of a single crystalline diamond structure having one or more diamond layers, at least one of which is formed by a CVD process. The diamond layers are “lattice-matched” or “lattice-mismatched” to each other to provide a desired level of strain.
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Doering Patrick J.
Linares Robert C.
Apollo Diamond, Inc.
Fredrikson & Byron , P.A.
Kunemund Robert
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