Tunable cut-off UV detector based on the aluminum gallium nitrid

Details Tunable cut-off UV detector based on the aluminum gallium nitrid Tunable cut-off UV detector based on the aluminum gallium nitrid

1984-10-09

1986-09-30

Davie, James W.

357 15, 357 61, H01L 2714, H01L 3100

Patent

active

046149619

ABSTRACT:
A method of preparing a UV detector of Al.sub.x Ga.sub.1-x N. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AlN and then Al.sub.x Ga.sub.1-x N on a sapphire substrate. A photodetector structure is fabricated on the AlGaN.

REFERENCES:
patent: 4095331 (1978-06-01), Rutz
patent: 4300149 (1981-11-01), Howard et al.
Khan et al., "Properties of Ion Implantation of AlGaN Epitaxial Single Crystal Films Prepared by Low Pressure Metal Organic Deposition", Applied Physics Letters, Sep., 1983, pp. 1-3.
A. R. Annoeva et al., "Photoelectric Effect in Variable-Gap Ga.sub.1-x Al.sub.x P Surface-Barrier Structures", Sov. Phys. Semicond. 15 (1), Jan. 1981, pp. 64-66.
A. R. Annoeva et al., "Ultraviolet Photodetector Based on a Variable Gap Ga.sub.1-x Al.sub.x P Surface Barrier Structure" Sov. Phys. Semicond. 15 (6), Jun. 1981, pp. 646-647.
D. L. Smith et al., "Growth of AlGaN Films for Electrooptic Device Applns.", Report to ONR N00014-77-C-0942.

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