Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – Plural diodes in same non-isolated structure – or device...
Patent
1991-05-04
1993-06-15
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
Plural diodes in same non-isolated structure, or device...
257312, 257480, 257595, H01L 2992
Patent
active
052201945
ABSTRACT:
A variable field effect capacitive device suitable for providing different amounts of capacitance in response to control signals of different magnitudes. The device includes a pair of plate electrodes and a pair of control electrodes. A semiconductor region is located between the control electrodes. The plates each make Schottky contact to the semiconductor region to form a depletion region therein which changes shape in response to changes in the magnitude of the control signals.
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Fleming et al., "GaAs SAMP . . . Switching", IEEE, vol. MTT-27, No. 12, Dec. 1979.
Golio John M.
Massey Ronald J.
Miller Monte G.
Fliegel Frederick M.
Handy Robert M.
Hille Rolf
Jones Maurice J.
Motorola Inc.
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