Tube formed of bonded silicon staves

Stock material or miscellaneous articles – Hollow or container type article

Reexamination Certificate

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C211S041100, C206S454000, C206S710000

Reexamination Certificate

active

07854974

ABSTRACT:
Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.

REFERENCES:
patent: 2336995 (1943-12-01), Mackenzie et al.
patent: 3806223 (1974-04-01), Keck et al.
patent: 3867497 (1975-02-01), Teich et al.
patent: 4020791 (1977-05-01), Reuschel et al.
patent: 4066120 (1978-01-01), Mold et al.
patent: 4123989 (1978-11-01), Jewett
patent: 4330558 (1982-05-01), Suzuki et al.
patent: 4357201 (1982-11-01), Grabmaier et al.
patent: 4428975 (1984-01-01), Dahm et al.
patent: 4440728 (1984-04-01), Stormont et al.
patent: 4587700 (1986-05-01), Curbishley et al.
patent: 4612601 (1986-09-01), Watari
patent: 4666775 (1987-05-01), Kim et al.
patent: 4684383 (1987-08-01), Cavender et al.
patent: 5098675 (1992-03-01), Matsuo et al.
patent: 5102494 (1992-04-01), Harvey et al.
patent: 5210054 (1993-05-01), Ikeda et al.
patent: 5364010 (1994-11-01), Mizuhara
patent: 5492229 (1996-02-01), Tanaka et al.
patent: 5529651 (1996-06-01), Yoshida et al.
patent: 5573964 (1996-11-01), Hsu
patent: 5578964 (1996-11-01), Kim et al.
patent: D404371 (1999-01-01), Shimazu et al.
patent: D411176 (1999-06-01), Shimazu et al.
patent: 6056123 (2000-05-01), Niemirowski et al.
patent: 6196211 (2001-03-01), Zehavi et al.
patent: 6203752 (2001-03-01), Bewlay et al.
patent: 6205993 (2001-03-01), Zehavi et al.
patent: 6225154 (2001-05-01), Allman
patent: 6225594 (2001-05-01), Zehavi
patent: 6247221 (2001-06-01), Ritland et al.
patent: 6284997 (2001-09-01), Zehavi et al.
patent: 6355577 (2002-03-01), Reder et al.
patent: 6425168 (2002-07-01), Takaku
patent: 6455395 (2002-09-01), Boyle et al.
patent: 6502239 (2002-12-01), Zgarba et al.
patent: 6528391 (2003-03-01), Henley et al.
patent: 6532642 (2003-03-01), Wingo
patent: 6809015 (2004-10-01), Kobayashi
patent: 0 713 245 (1996-05-01), None
patent: 10321543 (1997-05-01), None
patent: 1 049 133 (2000-04-01), None
patent: 2-229692 (1990-09-01), None
patent: 5-175319 (1993-07-01), None
patent: 09-113744 (1997-02-01), None
patent: 2000 031153 (2000-01-01), None

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