TTL circuit having improved pulldown circuit

Details TTL circuit having improved pulldown circuit TTL circuit having improved pulldown circuit

1987-09-15

1989-03-21

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307458, 307551, 307566, H03K 198, H03K 1913, H03K 1920, H03K 313

Patent

active

048146455

ABSTRACT:
An SBD-npn transistor is connected between an output terminal and a low potential source connection terminal and pulldown means such as a resistor and a Schottky barrier diode are inserted in series between the base of the SBD-npn transistor and the low potential source connection terminal. The pulldown means extracts leakage current appearing between the base and the collector of the SBD-npn transistor being in a nonconducting state, to prevent the leakage current from serving as base current.

REFERENCES:
patent: 3999080 (1976-12-01), Weathersby, Jr. et al.
patent: 4228371 (1980-10-01), Mazgy
patent: 4400635 (1983-08-01), Mazgy
patent: 4501976 (1985-02-01), West et al.
patent: 4542331 (1985-09-01), Boyer
patent: 4697103 (1987-09-01), Ferris et al.
patent: 4728824 (1988-03-01), Van Zantel
Mitsubishi Semiconductors Data Book 1985, Bipolar Digital IC Alsttl.

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