Triple poly-si replacement scheme for memory devices

Details Triple poly-si replacement scheme for memory devices Triple poly-si replacement scheme for memory devices

2007-04-30

2010-10-05

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S690000, C438S702000, C216S037000, C216S089000

Reexamination Certificate

active

07807580

ABSTRACT:
A method of replacing a top oxide around a storage element of a memory device is provided. The method can involve removing a core first poly and core first top oxide in a core region while not removing a periphery first poly in a periphery region on a semiconductor substrate; forming a second top oxide around a storage element in the core region and on the periphery first poly in the periphery region; forming a second poly over the semiconductor substrate in both the core and periphery regions; removing the second poly and second top oxide in the periphery region; and forming a third poly on the semiconductor substrate in both the core and periphery regions.

REFERENCES:
patent: 4774202 (1988-09-01), Pan et al.
patent: 6204159 (2001-03-01), Chang et al.
patent: 6943373 (2005-09-01), Takaura et al.
patent: 7151028 (2006-12-01), Fang et al.
patent: 2007/0243680 (2007-10-01), Harari et al.

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