Triple layer polysilicon cell

Details Triple layer polysilicon cell Triple layer polysilicon cell

1977-06-29

1978-07-04

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 357 59, 307304, 307238, 365185, H01L 2927

Patent

active

040991962

ABSTRACT:
A triple layer polysilicon cell for use in an electrically erasable PROM or for a discretionary circuit connector is described. Tunneling is employed to transfer charge to a floating gate from a programming gate and also to transfer charge from the floating gate to an erasing gate. Through light doping steps, the first layer of polysilicon (programming gate) and a second layer of polysilicon (floating gate) include rough surfaces. These rough surfaces provide enhanced electric fields which allow tunneling through relatively thick oxides.

REFERENCES:
patent: 3500142 (1970-03-01), Kahng
patent: 3660819 (1972-05-01), Frohman-Bentchkonsky
patent: 3797000 (1974-03-01), Augusta
patent: 3825945 (1974-07-01), Masuoka
patent: 3825946 (1974-07-01), Frohman-Bentchkonsky
patent: 3868187 (1975-02-01), Masuoka
patent: 3906296 (1975-09-01), Maserjian
patent: 3919711 (1975-11-01), Chou
patent: 3984822 (1976-10-01), Simko
patent: 3996657 (1976-12-01), Simko
patent: 4016588 (1977-04-01), Ohya

Affiliated with

Also associated with

Rating

Triple layer polysilicon cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Triple layer polysilicon cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Triple layer polysilicon cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-280975