Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-10-04
2010-10-26
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S094000, C257S096000, C257SE33019
Reexamination Certificate
active
07821019
ABSTRACT:
A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.
REFERENCES:
patent: 6046464 (2000-04-01), Schetzina
patent: 6936188 (2005-08-01), Haga
patent: 7132691 (2006-11-01), Tanabe et al.
patent: 7227196 (2007-06-01), Burgener et al.
patent: 2002/0014631 (2002-02-01), Iwata et al.
patent: 2004/0094085 (2004-05-01), White et al.
patent: 2004/0099876 (2004-05-01), Niki et al.
patent: 2004/0227150 (2004-11-01), Nakahara
patent: 2005/0224825 (2005-10-01), Ishizaki
patent: 2005/0242357 (2005-11-01), Uematsu et al.
Alivov, Ya. I. et al. “Fabrication and characterization ofn-ZnO/p-AIGaN heterojunction light-emitting diodes on 6H-SiC substrates”,Applied Physics Letters, vol. 83, No. 23, Dec. 8, 2003, 4719-4721.
Yu, Qing-Xuan et al. “Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode”,Applied Physics Letters, vol. 83, No. 23, Dec. 8, 2003, 4713-4715.
Ryu, Y.R. et al. “Fabrication of homostructural ZnOp-n. junctions and ohmic contacts to arsenic-dopedp-type ZnO”,Applied Physics Letters, vol. 83, No. 19, Nov. 10, 2003, 4032-4034.
Alivov, Ya.I. et al. “Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes”,Applied Physics Letters, vol. 83, No. 14, Oct. 6, 2003, 2943-2945.
Aoki, T. et al. “ZnO diode fabricated by excimer-laser doping”,Applied Physics Letters, vol. 76, No. 22, May 29, 2000, 3257-3258.
Dabiran Amir Massoud
Dong Jianwei
Hertog Brian James
Kauser Mohammed Zahed
Osinsky Andrei Vladimirovich
Cao Phat X
Garrity Diana C
Kinney & Lange , P.A.
SVT Associates, Inc.
LandOfFree
Triple heterostructure incorporating a strained zinc oxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Triple heterostructure incorporating a strained zinc oxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Triple heterostructure incorporating a strained zinc oxide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4155940