Triple gate device having strained-silicon channel

Details Triple gate device having strained-silicon channel Triple gate device having strained-silicon channel

2005-05-03

2005-05-03

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

Reexamination Certificate

active

06888181

ABSTRACT:
A three-dimensional Triple-Gate (Tri-gate) device having a three-sided strained silicon channel and superior drive current is provided. The Tri-gate device includes a composite fin structure consisting of a silicon germanium core and a three-sided strained silicon epitaxy layer grown from surface of said silicon germanium core. A gate strip wraps a channel portion of the composite fin structure. Two distal end portions of the composite fin structure not covered by the gate strip constitute source/drain regions of the Tri-gate device. A high quality gate insulating layer is interposed between the composite fin structure and the gate strip.

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patent: 5338959 (1994-08-01), Kim et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6727546 (2004-04-01), Krivokapic et al.
patent: 6764884 (2004-07-01), Yu et al.
patent: 6838322 (2005-01-01), Pham et al.

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