Triple diffused logic elements

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 40, 357 46, 307303, H01L 2972

Patent

active

040054705

ABSTRACT:
In a semiconductor structure, a semiconductor body of one conductivity type having a planar surface and a first region of opposite conductivity formed in said body and extending to said surface. Spaced second, third and fourth regions of one conductivity type are formed in said first region and extend to said surface. Fifth and sixth regions of opposite conductivity are respectively formed entirely within said second and third regions and extend to said surface. In addition a seventh region of one conductivity type may be formed spaced from said second, third and fourth regions and an eighth region of opposite conductivity type formed entirely within said seventh region. A method for forming the semiconductor logic structure is also disclosed.

REFERENCES:
patent: 3356860 (1967-12-01), Norman
patent: 3414783 (1968-12-01), Moore
patent: 3564443 (1971-02-01), Nagatn

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