Triple cascode power amplifier of inner parallel...

Details Triple cascode power amplifier of inner parallel... Triple cascode power amplifier of inner parallel...

2008-04-01

2008-04-01

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

C330S310000

Reexamination Certificate

active

07352247

ABSTRACT:
Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.

REFERENCES:
patent: 6137367 (2000-10-01), Ezzedine et al.
patent: 7126428 (2006-10-01), Lin et al.
patent: 7151410 (2006-12-01), Franck et al.

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