Triode sputtering system

Details Triode sputtering system Triode sputtering system

1977-11-08

1978-09-05

Mack, John H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C23C 1500

Patent

active

041117832

ABSTRACT:
A triode sputtering system comprises a plasma confining enclosure including a cathode at one end, an anode at the other, and a central plasma supporting portion. Contamination caused by unwanted sputtering of the surfaces of the confining apparatus is substantially eliminated by making the confining enclosure in several, typically four, electrically isolated portions, namely, the cathode support portion, the anode support portion and a pair of plasma support portions. In the structure described there is avoided the relatively large potential difference between the confinement enclosure and the plasma, which occurs predominantly at the anode support end of the confining enclosure of prior art one-piece apparatus. This portion of the apparatus has been found to be the major source of unwanted sputtering therein.

REFERENCES:
patent: 3487000 (1969-12-01), Hajzak
patent: 3544445 (1970-12-01), Moseson et al.
patent: 3562142 (1971-02-01), Lamont
patent: 3839182 (1974-10-01), Sager
patent: 4013533 (1977-03-01), Cohen-Solal et al.
T. C. Tisone et al., "Low-Voltage Triode Sputtering With A Confined Plasma--Part II--Plasma Characteristics & Energy Transport," J. Vac. Sci. Tech. vol. 12, pp. 1058-1066 (1975).

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