Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-10-25
2005-10-25
Wilson, Christian (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S202000, C257S204000, C257S213000, C257S236000, C313S309000, C313S310000, C313S311000, C977S726000
Reexamination Certificate
active
06958499
ABSTRACT:
Provided is a field emission device having a mesh gate. The object of this research is to provide a field emission display (FED) using a triode field emission device for preventing increase of operation voltage, and securing high concentration of electron beams. The operation properties of the FED is different based on a structure of an extraction electrode. In this research, the extraction electrode is formed on the electron emitting source and it has a plurality of openings corresponding to the locations of carbon nanotube mixture. The concentration of the electron beams is raised and leakage current is suppressed by using an insulating mesh gate plate. The upper part of the openings has a smaller diagram than the lower part. The high concentration of electron beams and little leakage current can be generated by adding auxiliary electrodes or optimizing the shape of electrodes.
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Applied Physics Letters, vol. 78, No. 11, Mar. 12, 2001, pp. 1547-1549.
Applied Physics Letters, vol. 78, No. 9, Feb. 26, 2001, pp. 1294-1296.
Chung Choong-Heui
Hwang Chi-Sun
Kim Bong-Chul
Song Yoon-Ho
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Menz Douglas
Wilson Christian
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