Trimming method for resistance value of polycrystalline silicon

Details Trimming method for resistance value of polycrystalline silicon Trimming method for resistance value of polycrystalline silicon

1978-04-26

1980-07-08

Husar, Francis S.

Metal working

Method of mechanical manufacture

Electrical device making

29620, 330199, H01H 1000

Patent

active

042109965

ABSTRACT:
Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated circuit, the current is passed through the existing (not additional) terminals of the integrated circuit.

REFERENCES:
patent: 3261082 (1966-07-01), Maissel
patent: 3308528 (1967-03-01), Bullard
patent: 3890610 (1975-06-01), Cahen
patent: 4131884 (1978-12-01), Comer
patent: 4138671 (1979-02-01), Comer

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