Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-12-27
2005-12-27
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S529000, C257S542000
Reexamination Certificate
active
06979879
ABSTRACT:
In a zener zap diode device and a system for making such a device using a double poly process, p+ and n+regions are formed in a tub by means of p-doped and n-doped polysilicon regions, and a p-n junction is formed between the p+ region and an n-tub or between the n+ region and a p-tub. Cobalt or other refractory metal is reacted with silicon to form a silicide on at least the p-doped polysilicon region. By reverse biasing the p-n junction and establishing a sufficiently high zap current, the silicide can be forced to migrate across the junction to form a silicide bridge thereby selectively shorting out the p-n junction.
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Strachan Andy
Yindeepol Wipawan
Jackson Jerome
National Semiconductor Corporation
Pickering Mark C.
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