Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2006-06-20
2006-06-20
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C438S133000
Reexamination Certificate
active
07064358
ABSTRACT:
An embodiment is a Electro Static Discharge (ESD) protection device comprising: a n-doped region and a p-doped region in a p-well in a semiconductor structure. The n-doped region and the p-doped region are spaced. A n-well and a deep n-well surrounding the p-well on the sides and bottom. A first I/O pad connected to the n-doped region. A trigger circuit connected the first I/O pad and the p-doped region. A second I/O pad connected to the n-well. A parasitic bipolar transistor is comprised of the n-doped region that functions as a collector terminal, the P-well that functions as a base terminal, and the deep N-well that functions as the emitter terminal. Whereby under an ESD condition, the p-well is charged positive using the trigger circuit and the parasitic bipolar transistor can be turned on.
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Filippi Raymond
Lo Keng Foo
Manna Indrajlt
Tan Pee Ya
Chartered SemiConductor Manufacturing, LTD
Owens Douglas W.
Stoffel William J.
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