Triangular deposition chamber for a vapor deposition system

Details Triangular deposition chamber for a vapor deposition system Triangular deposition chamber for a vapor deposition system

1993-06-08

1994-10-11

Bueker, Richard

Coating processes

Coating by vapor, gas, or smoke

118715, 118725, 264 81, C23C 1600

Patent

active

053545800

ABSTRACT:
A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.

REFERENCES:
patent: 4963393 (1990-10-01), Goela
patent: 4981102 (1991-01-01), Gautreaux
patent: 4990374 (1991-02-01), Kelley

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