Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1998-08-18
2000-12-19
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257105, 257 14, H01L 3300
Patent
active
06163039&
ABSTRACT:
A GaAs-InGaP triangular-barrier optoelectronic switch (TBOS) is disclosed, wherein two i-InGaP layers are formed on both sides of the p.sup.+ -GaAs layer in the conventional triangular-barrier structure. By introducing avalanche multiplication and carrier confinement into the device operation, S-shaped negative-differential-resistance (NDR) performances are observed in the I-V (current-voltage) characteristic curves under normal and reverse operation modes. Moreover, the TBOS of the present invention shows a flexible optical function because the barrier height is associated with incident light. Owing to the incident light changing the potential barrier height for the electrons thermionically emitted over it, the I-V characteristics of the TBOS are optically controllable.
REFERENCES:
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patent: 5663572 (1997-09-01), Sakata et al.
patent: 5952683 (1999-09-01), Sakata et al.
Guo, Der-Feng, "Bistable GaAs-InGaP triangular-barrier optoelectronic switch", Appl. Phys. Lett. 71 (9), Sep. 1, 1997, pp. 1219-1221.
Malik et al., "Rectifying, Variable Planar-Doped-Barrier Structures in GaAs", Inst. Phys. Conf. Ser. No. 56: Chapter 9, pp. 697-709, 1980.
Meier Stephen D.
National Science Council
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