Triamine positive photoresist stripping composition and prebakin

Details Triamine positive photoresist stripping composition and prebakin Triamine positive photoresist stripping composition and prebakin

1987-07-30

1989-04-25

Michl, Paul R.

Radiation imagery chemistry: process, composition, or product th

Stripping process or element

Forming nonplanar image

430326, 430329, 430330, 430331, 252153, 252171, 252542, 252544, 252DIG8, G03F 700, G03C 500

Patent

active

048247634

ABSTRACT:
A stripping composition for removing positive organic photoresist from a substrate, such as a semiconductor wafer, contains a triamine, such as diethylene triamine, and a nonpolar or polar organic solvent, such as N-methyl pyrrolidone. This composition will remove positive photoresist from semiconductor wafers, even after ion implantation into the wafers through the positive photo-resist. The wafers are immersed in the composition, for example, at a temperature of 110.degree. C. for five minutes, in an ultrasonic bath after heavy ion implantation doses through the photoresist, such as 1.times.10.sup.16 ions/cm.sup.2, for complete removal of the photoresist. Prebaking the photoresist at a temperature of between about 150.degree. and 220.degree. C. for a time of from about 15 minutes to about 30 minutes, prior to stripping the positive organic photoresist layer with the triamine, enhances the removal.

REFERENCES:
patent: 3649544 (1972-03-01), Gotte et al.
patent: 4072528 (1978-02-01), Bratt
patent: 4311618 (1982-01-01), Schafer-Burkhard
patent: 4401748 (1983-08-01), Ward Jr. et al.
patent: 4403029 (1983-09-01), Ward, Jr. et al.
patent: 4666824 (1977-05-01), Messer

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