Patent
1978-03-28
1978-12-19
Clawson, Jr., Joseph E.
357 20, 357 55, H01L 29747
Patent
active
041308280
ABSTRACT:
A new triac structure is provided comprising as a classical triac layers N1 to N4 and P1 and P2, and metallizations A1, G and A2 arranged as indicated in the hereinbelow drawings. The layers N1 and N3 have substantially the same boundary in projection and a groove 10 is formed at the boundary of the layer N3 in order to cross the layer P2. Accordingly, the N1 and N3 regions have no common surface in projection. The triac has substantially the same sensitivity in the four triggering modes.
REFERENCES:
patent: 3123750 (1964-03-01), Hutson et al.
patent: 3535615 (1970-10-01), Howell et al.
patent: 3696273 (1972-10-01), Foster
patent: 3731162 (1973-05-01), Suenaga et al.
patent: 3970843 (1976-07-01), Dumas
patent: 3972014 (1976-07-01), Hutson
Clawson Jr. Joseph E.
Silec-Semi-Conducteurs
LandOfFree
Triac structure having improved triggering sensitivity with sing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Triac structure having improved triggering sensitivity with sing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Triac structure having improved triggering sensitivity with sing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2375861