Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1980-10-22
1986-09-09
Clawson, Jr., Joseph E.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 234, 357 2312, 357 39, 357 86, H03K 1760
Patent
active
046111280
ABSTRACT:
In a triac having a multilayer semiconductor body arranged between two electrodes, in which a first layer forms the p-base layer of a first thyristor and the p-emitter layer of a second thyristor, a second layer represents the n-base layers of both thyristors and a third layer forms the p-emitter layer of the first thyristor and the p-base layer of the second thyristor, and in which the n-emitter layer of the first thyristor is disposed in the first layer and an n-emitter of the second thyristor is disposed in the third layer, a gate-controlled MIS structures are provided which contain controllable emitter short circuit paths, the provision being at the n-emitter layer of the first thyristor and at the p-emitter layer of the second thyristor in the boundary area of both thyristors.
REFERENCES:
patent: 3243669 (1966-03-01), Sah
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3742318 (1971-11-01), Yamashita
patent: 3753055 (1973-08-01), Yamashita et al.
patent: 3831187 (1974-08-01), Neilson
patent: 3858235 (1974-12-01), Schild
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 3896476 (1975-07-01), Kawakami
patent: 4016592 (1977-04-01), Yatsuo et al.
patent: 4087834 (1978-05-01), Temple
patent: 4092703 (1978-05-01), Sueoka et al.
patent: 4142201 (1979-02-01), Sittig et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4219833 (1980-08-01), Temple
patent: 4224634 (1980-09-01), Svedberg
patent: 4243998 (1981-01-01), Schlangenotto et al.
patent: 4244000 (1981-01-01), Ueda et al.
patent: 4301462 (1981-11-01), Lowry
patent: 4331884 (1982-05-01), Svedberg
Blicher, A., Transistor Physics, Springer-Verlag, New York, Heidelberg, Berlin, 1976, pp. 131-135.
B. Baliga, "Enhang and Depl. Vert. Chan. MOS Gated Thyrs.", Electr. Lett., Sep. 27, 1979, vol. 15, #20, pp. 645-647.
J. Plummer et al., "Insulated-Gate Planar Thyrs. I & II", IEEE Trans. on Elec. Dev., vol. Ed-27, #2, Feb. 1980, pp. 380-394.
Clawson Jr. Joseph E.
Siemens Aktiengesellschaft
LandOfFree
Triac having a multilayer semiconductor body does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Triac having a multilayer semiconductor body, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Triac having a multilayer semiconductor body will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1016547