Tri-tone attenuated phase shift trim mask for double...

Details Tri-tone attenuated phase shift trim mask for double... Tri-tone attenuated phase shift trim mask for double...

2005-03-01

2005-03-01

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S394000, C257S754000

Reexamination Certificate

active

06861182

ABSTRACT:
Employing a tri-tone attenuated phase shift trim mask in the second exposure of a double exposure alternating phase shift mask (alt-PSM) process is disclosed. A semiconductor wafer is first exposed utilizing a dark field alt-PSM, and then secondly is exposed utilizing a tri-tone attenuated PSM. The tri-tone attenuated PSM may include a transparent substrate, such as quartz, an opaque layer, such as chrome, and an attenuated layer, such as 6% transparency molybdenum silicide (MoSi). The opaque layer has a pattern corresponding to polysilicon gates to be imprinted on the semiconductor wafer, to protect the polysilicon photoresist patterns. The attenuated layer includes assist features to protect forbidden pitch semi-isolated field polysilicon patterns and isolated field polysilicon patterns to be imprinted on the semiconductor wafer.

REFERENCES:
patent: 6551750 (2003-04-01), Pierrat

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