Tri-layer plasma etch resist rework

Details Tri-layer plasma etch resist rework Tri-layer plasma etch resist rework

2007-08-22

2010-10-12

Culbert, Roberts (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S047000, C216S067000, C438S694000, C430S270100

Reexamination Certificate

active

07811942

ABSTRACT:
Exemplary embodiments provide a tri-layer resist (TLR) stack used in a photolithographic process, and methods for resist reworking by a single plasma etch process. The single plasma etch process can be used to remove one or more portions/layers of the TLR stack that needs to be reworked in a single process. The removed portions/layers can then be re-formed and resulting in a reworked TLR stack for subsequent photo-resist (PR) processing. The disclosed plasma-etch resist rework method can be a fast, simple, and cost effective process used in either single or dual damascene tri-layer patterning processes for the fabrication of, for example, sub 45-nm node semiconductor structures.

REFERENCES:
patent: 6475707 (2002-11-01), Yu

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