Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2007-09-25
2007-09-25
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S288000, C257S368000, C257S365000, C257S391000, C257S410000
Reexamination Certificate
active
11144202
ABSTRACT:
The present invention provides a tri-gate lower power device and method for fabricating that tri-gate semiconductor device. The tri-gate device includes a first gate [455] located over a high voltage gate dielectric [465] within a high voltage region [460], a second gate [435] located over a low voltage gate dielectric [445] within a low voltage core region [440] and a third gate [475] located over an intermediate core oxide [485] within an intermediate core region [480]. One method of fabrication includes forming a high voltage gate dielectric layer [465] over a semiconductor substrate [415], implanting a low dose of nitrogen [415a] into the semiconductor substrate [415] in a low voltage core region [440], and forming a core gate dielectric layer [445] over the low voltage core region [440], including forming an intermediate core gate dielectric layer [485] over an intermediate core region [480].
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Adam Lahir Shaik
Breashears Eddie H.
Tsao Alwin J.
Brady W. James
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wojciechowicz Edward
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