Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1989-03-24
1990-07-31
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37302
Patent
active
049452460
ABSTRACT:
A three-stage E-beam deflection system employs breaking the entire field to be scanned into clusters and sub-fields. The scanning provided by the first stage of deflection which scans within the entire field is rectilinear and discontinuous with the scan stopping in the center of each of the clusters where an exposure is to be made, and scanning is the same within each cluster from sub-field to sub-field. The scanning within a cluster by the second stage stops in the center of each sub-field where exposure is to be made. The third stage uses high speed electrostatic deflection to provide scanning with a vector scanning mode within the sub-field being scanned.
REFERENCES:
patent: 4199689 (1980-04-01), Takigawa
patent: 4376249 (1983-03-01), Pfeiffer
patent: 4390789 (1983-06-01), Smith et al.
patent: 4465934 (1984-08-01), Westerberg
patent: 4514638 (1985-04-01), Lischke et al.
patent: 4544846 (1985-10-01), Langner
patent: 4692579 (1987-09-01), Saitow et al.
The EBES4 Electron-Beam Column, by M. G. Thomson et al., (AT&T Bell Laboratories, Murray Hill, N.J. 07974).
Recent Advances in Electron-Beam Lithography for the High-Volume Production of VLSI Devices by Hans C. Pfeiffer, (Reprinted form IEEE Transactions on Electron Devices, vol. ED-26, No. 4, 4/79).
EBES4-A New Electron-Beam Exposure System by D. S. Alles et al., (AT&T Bell Laboratories, Murray Hill, N.J. 07974).
Electron Optical Column for High Speed Nanometric Lithography by N. Saitou et al., (Central Research Lab. Hitachi Ltd., Tokyo 185, Japan).
Davis Donald E.
Ho Cecil T.
Lieberman Jon E.
Pfeiffer Hans C.
Sturans Maris A.
Berman Jack I.
International Business Machines - Corporation
Jones II Graham S.
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