Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Patent
1991-11-22
1994-05-10
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
257584, 257586, 257590, 257591, 257592, H01L 2972, C30B 2300
Patent
active
053110552
ABSTRACT:
Both homojunction and heterojunction bipolar transistor structures are fabricated in unique trenched configurations so as to better utilize their surface areas by employing both the vertical and horizontal portions of their base regions with equal effectiveness. An important advantage of the unique trenched configurations is that the base region of each trenched structure is of precisely the same thickness throughout--both vertical and horizontal portions. Consequently, the transit time for charge carriers to diffuse across the base region and the base transport factor are uniform because of the uniform base thickness. Moreover, the parasitic capacitance region of each trenched structure beneath base metallization contacts is only a small portion of the entire base-collector junction region. Accordingly, the RC time constant of each trenched structure is very low and the high frequency response gain of the heterojunction trenched bipolar transistor structure is an order of magnitude higher than its conventional heterojunction bipolar transistor counterpart.
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IBM Technical Disclosure Bulletin, "Surrounding-Collector Trench Bipolar nsistor with Minimized Base Resistance", vol. 34, No. 2, Jul. 1991.
Goodman Alvin M.
Yoder Max N.
Jackson Jerome
Kwitnieski Alfons
Martin Valencia M.
McDonald Thomas E.
The United States of America as represented by the Secretary of
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