Trench type Schottky rectifier with oxide mass in trench bottom

Details Trench type Schottky rectifier with oxide mass in trench bottom Trench type Schottky rectifier with oxide mass in trench bottom

2007-03-02

2009-10-13

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S476000, C257S483000

Reexamination Certificate

active

07602036

ABSTRACT:
A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A Schottky barrier electrode is connected to the tops of the mesas and the tops of the polysilicon fillers. Further oxide spacers may be formed in the length of the polysilicon fillers.

REFERENCES:
patent: 2002/0066926 (2002-06-01), Hshieh et al.

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