Trench-type schottky-barrier diode

Details Trench-type schottky-barrier diode Trench-type schottky-barrier diode

1997-02-13

1999-06-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257457, 257471, 257483, 257484, H01L 29861, H01L 31107

Patent

active

059172282

ABSTRACT:
The present invention relates to a schottky-barrier diode capable of decreasing a leakage current due to damage generated on inner walls of trenches, and securing a large operation region for itself. In the device, an N.sup.- -type epitaxial layer is formed on a N.sup.+ -type silicon substrate. In a predetermined region in the epitaxial layer, a P.sup.+ -type base diffusion layer having high impurity concentration is formed. Trenches are formed through from the surface of the base diffusion layer to the epitaxial layer. In each of the trenches, an N.sup.- -type selective epitaxial growth region is formed. A schottky metal is formed on a surface comprising the surfaces of the base diffusion layer, which includes the selective epitaxial growth regions, and the epitaxial layer. Surface regions as the surfaces of the selective epitaxial growth regions filling the trenches function as diode operation regions.

REFERENCES:
patent: 3846192 (1974-11-01), Murrmann
patent: 4675468 (1987-06-01), Basol et al.
patent: 5017976 (1991-05-01), Sugita
patent: 5612568 (1997-03-01), Arai

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