Trench transistor with localized source/drain regions implanted

Details Trench transistor with localized source/drain regions implanted Trench transistor with localized source/drain regions implanted

1996-10-30

1999-03-30

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438270, 438282, 438425, H01L 21265, H01L 2100

Patent

active

058888802

ABSTRACT:
A method of forming an IGFET includes forming a trench with opposing sidewalls and a bottom surface in a substrate, selectively growing an oxide layer on the bottom surface so that the oxide layer includes a thick region between thin regions, implanting localized source and drain regions through the thin regions using the thick region as an implant mask, stripping the oxide layer, forming a gate insulator and gate electrode in the trench, and forming a source and drain in the substrate that include the localized source and drain regions adjacent to the bottom surface of the trench. The localized source and drain regions provide accurately positioned channel junctions beneath the trench. Furthermore, the locations and dopant concentrations of the localized source and drain regions are controlled by the dimensions of the selectively grown oxide layer.

REFERENCES:
patent: 4745086 (1988-05-01), Parillo et al.
patent: 4830975 (1989-05-01), Bovaird et al.
patent: 5141891 (1992-08-01), Arima et al.
patent: 5166084 (1992-11-01), Pfiester
patent: 5175118 (1992-12-01), Yoneda
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5362662 (1994-11-01), Ando et al.
patent: 5399515 (1995-03-01), Davis et al.
patent: 5504031 (1996-04-01), Hsu et al.
patent: 5512506 (1996-04-01), Chang et al.
patent: 5538913 (1996-07-01), Hong
patent: 5545579 (1996-08-01), Liang et al.
patent: 5547884 (1996-08-01), Yamaguchi et al.
patent: 5554550 (1996-09-01), Yang
patent: 5567635 (1996-10-01), Acovic et al.
patent: 5571738 (1996-11-01), Krivokapic
patent: 5587331 (1996-12-01), Jun
patent: 5610091 (1997-03-01), Cho
patent: 5736435 (1998-04-01), Venkatesan et al.

Affiliated with

Also associated with

Rating

Trench transistor with localized source/drain regions implanted does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench transistor with localized source/drain regions implanted , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench transistor with localized source/drain regions implanted will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1214410