Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive...
Reexamination Certificate
2007-01-02
2009-06-23
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
C257SE21548
Reexamination Certificate
active
07550361
ABSTRACT:
A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of features of the same fabrication level of the integrated circuit chip to an optical alignment target formed in the substrate and forming the second set of features using photolithography, the optical alignment target itself is aligned to the electron beam alignment target. Also a method of forming and a structure of the electron beam alignment target.
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Fried David Michael
Hergenrother John Michael
McNab Sharee Jane
Rooks Michael J.
Topol Anna
International Business Machines - Corporation
Richards N Drew
Schmeiser Olsen & Watts
Singal Ankush K
Trepp Robert M.
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