Trench sidewall structure

Details Trench sidewall structure Trench sidewall structure

1993-12-10

1996-05-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437190, 437191, H01L 218242

Patent

active

055211143

ABSTRACT:
The invention provides a trench sidewall structure and a method of forming and using the same to reduce parasitic sidewall leakage through a trench sidewall, for example from bitline contact to storage node or from storage node to substrate. The method involves placing a polysilicon layer of the same polarity as that of the array well, along with a diffusion barrier layer such an titanium nitride, between the storage node poly and the oxide collar.

REFERENCES:
patent: 4830972 (1989-05-01), Hamasalci
patent: 4918502 (1990-04-01), Kaga et al.
Metal-Oxide-Semiconductor Field-Effect Transistor with Polysilicon Gate Doped with Same Impurity as Substrate, IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec. 1985, pp. 3149 and 3150.

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