Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-05-29
1998-11-17
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257301, H01L 27108
Patent
active
058380558
ABSTRACT:
Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
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T.K. Whidden et al.; Catalyzed HF Vapor Etching of Silicon Dioxide for Micro-and Nanolithographic Masks; J. Electrochem. Soc., vol. 142, No. 4, Apr. 1995; pp. 1199-1205.
Kleinhenz Richard L.
Natzle Wesley C.
Yu Chienfan
Hardy David B.
International Business Machines - Corporation
Schnurmann Daniel
Wallace Valencia
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