Trench separator for self-defining discontinuous film

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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438253, H01L 2120

Patent

active

061502308

ABSTRACT:
A discontinuous film structure on a substrate, with an etch stop layer on the substrate, a separator layer with an opening formed therein on the etch stop layer and a discontinuous-as-deposited film on the separator layer, the discontinuity substantially in register with the opening. The structure is made into a stacked capacitor with the discontinuous film being the bottom electrode, by forming a continuous dielectric layer on the bottom electrode and a continuous top electrode layer on the dielectric layer.

REFERENCES:
patent: 5143861 (1992-09-01), Turner
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5416042 (1995-05-01), Beach et al.
patent: 5418180 (1995-05-01), Brown et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5478772 (1995-12-01), Fazan et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5504041 (1996-04-01), Summerfelt
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5534458 (1996-07-01), Okudaira et al.
patent: 5550076 (1996-08-01), Chen et al.
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5776808 (1998-07-01), Muller et al.

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