Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-01-13
1995-11-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257520, 257538, H01L 2712, H01L 2702
Patent
active
054669634
ABSTRACT:
Dielectrically isolated trench fill material is used for the formation of one or more isolated resistor elements within respective ones of a plurality of dielectrically isolated island components in which circuit devices are formed, or in adjacent substrate material. A respective island may have a plurality of trench strip resistor devices, which may have the same or differing resistor values depending upon their geometries or doping concentrations. In addition, the resistor-containing architecture may include one or more conductive cross-unders each defined by a respective cross-under trench strip. A cross-under trench strip contains conductive material, such as heavily doped polysilicon, as opposed to lightly doped polysilicon of the resistor fill material.
REFERENCES:
patent: 3484932 (1969-12-01), Cook
patent: 3507036 (1970-04-01), Antipov et al.
patent: 3585714 (1971-06-01), Li
patent: 3601669 (1971-08-01), Merryman
patent: 4758531 (1988-07-01), Beyer et al.
patent: 4946800 (1990-08-01), Li
patent: 5352923 (1994-10-01), Boyd et al.
Harris Corporation
Jackson Jerome
Monin, Jr. Donald L.
Wands Charles E.
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