Trench process and structure for backside contact solar...

Details Trench process and structure for backside contact solar... Trench process and structure for backside contact solar...

2009-04-28

2010-10-12

Barton, Jeffrey T (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S261000

Reexamination Certificate

active

07812250

ABSTRACT:
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

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