Trench process and structure for backside contact solar...

Details Trench process and structure for backside contact solar... Trench process and structure for backside contact solar...

2009-02-25

2010-12-14

Barton, Jeffrey T (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S256000, C136S261000, C438S057000, C257SE31032

Reexamination Certificate

active

07851698

ABSTRACT:
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage.

REFERENCES:
patent: 3961997 (1976-06-01), Chu
patent: 4144096 (1979-03-01), Wada et al.
patent: 4927770 (1990-05-01), Swanson
patent: 4989059 (1991-01-01), Micheels et al.
patent: 5030295 (1991-07-01), Swanson et al.
patent: 5053083 (1991-10-01), Sinton
patent: 5057439 (1991-10-01), Swanson et al.
patent: 5164019 (1992-11-01), Sinton
patent: 5360990 (1994-11-01), Swanson
patent: 5369291 (1994-11-01), Swanson
patent: 5549762 (1996-08-01), Cantarini
patent: 5641362 (1997-06-01), Meier
patent: 5665175 (1997-09-01), Safir
patent: 5777346 (1998-07-01), Temple
patent: 6084175 (2000-07-01), Perry et al.
patent: 6211455 (2001-04-01), Ford et al.
patent: 6274402 (2001-08-01), Verlinden et al.
patent: 6313395 (2001-11-01), Crane et al.
patent: 6333457 (2001-12-01), Mulligan et al.
patent: 6337283 (2002-01-01), Verlinden et al.
patent: 6387726 (2002-05-01), Verlinden et al.
patent: 6423568 (2002-07-01), Verlinden et al.
patent: 6707046 (2004-03-01), Possin et al.
patent: 6933504 (2005-08-01), Hoffman et al.
patent: 6998288 (2006-02-01), Smith et al.
patent: 7054408 (2006-05-01), Jiang et al.
patent: 7112465 (2006-09-01), Goushcha et al.
patent: 7135350 (2006-11-01), Smith et al.
patent: 7468485 (2008-12-01), Swanson
patent: 2003/0106580 (2003-06-01), Lizotte
patent: 2005/0145274 (2005-07-01), Polce et al.
patent: 2005/0167603 (2005-08-01), Hoffman
patent: 2007/0215203 (2007-09-01), Ishikawa et al.
patent: 2008/0067622 (2008-03-01), Bui et al.
patent: 2008/0128846 (2008-06-01), Bui et al.
W.P. Mulligan, et al., “A Flat-Plate Concentrator: Micro-Concentrator Design Overview”, 2000, 3 sheets, Proceedings of the 28th IEEE PVSC.
K. R. McIntosh, et al., “The Choice of Silicon Wafer for the Production of Low-Cost Rear-Contact Solar Cells”, May 2003, 4 sheets, Sunpower Corporation, Sunnyvale, CA.
P.J. Verlinden, et al., “Will We have a 20%-Efficient(PTC) Photovoltaic System?”, 2001, 6 sheets, Proceedings of the 17th Europe Photovoltaic Solar Energy Conference.
William P. Mulligan, et al., “Development of Chip-Size Silicon Solar Cells”, 2000, 6 sheets, Proceedings of the 28th IEEE PVSC.
Akira Terao, et al., “A Mirror-Less Design for Micro-Concentrator Modules”, 2000, 4 sheets, Proceedings of the 28th IEEE PVSC.
P.J. Verlinden, et al., “Backside-Contact Silicon Solar Cells with Improved Efficiency for the '96 World Solar Challenge”, 1997, 5 sheets, Proceedings of the 15th EPSEC.
P.J. Verlinden, et al., “One-Year Comparison of a Concentrator Module with Silicon Point-Contact Solar Cell to a Fixed Flat Plate Module in Northern California”, 2000, 4 sheet, Proceedings of the 16th EPSEC.
Richard M. Swanson “The Promise of Concentrators”, 2000, Prog. Photovolt. Res. Appl. 8, pp. 93-111, Sunpower Corporation.
Ronald A. Sinton, et al., “Simplified Backside-Contact Solar Cells”, Feb. 1990, pp. 348-352, IEEE Transactions on Electron Devices, vol. 37. No. 2.
PCT International Search Report for Application No. PCT/US2009/042135, 2 sheets, Jun. 19, 2009.

Affiliated with

Also associated with

Rating

Trench process and structure for backside contact solar... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench process and structure for backside contact solar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench process and structure for backside contact solar... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4213143