Trench polysilicon diode

Details Trench polysilicon diode Trench polysilicon diode

2008-01-17

2009-11-03

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With groove to define plural diodes

C257S173000, C257S175000, C257S288000, C257S328000, C257S355000, C257SE21355, C257SE21356, C257SE21357, C257SE21358, C438S141000, C438S197000, C438S206000, C438S212000, C438S268000

Reexamination Certificate

active

07612431

ABSTRACT:
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.

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