Trench polysilicon diode

Details Trench polysilicon diode Trench polysilicon diode

2005-12-28

2009-06-09

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making conductivity modulation device

C438S197000, C438S212000, C438S268000, C438S270000, C438S272000, C257SE21355, C257SE21356, C257SE21357, C257SE21358

Reexamination Certificate

active

07544545

ABSTRACT:
Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N−(P−) type epitaxial region on a N+(P+) type substrate and forming a trench in the N−(P−) type epitaxial region. The method further includes forming a insulating layer in the trench and filling the trench with polysilicon forming a top surface of the trench. The method further includes forming P+(N+) type doped polysilicon region and N+(P+) type doped polysilicon region in the trench and forming a diode in the trench wherein a portion of the diode is lower than the top surface of the trench.

REFERENCES:
patent: 5321289 (1994-06-01), Baba et al.
patent: 5502320 (1996-03-01), Yamada
patent: 5637898 (1997-06-01), Baliga
patent: 5661322 (1997-08-01), Williams et al.
patent: 5998833 (1999-12-01), Baliga
patent: 5998836 (1999-12-01), Williams
patent: 5998837 (1999-12-01), Williams
patent: 6046470 (2000-04-01), Williams et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6078090 (2000-06-01), Williams et al.
patent: 6140678 (2000-10-01), Grabowski et al.
patent: 6255683 (2001-07-01), Radens et al.
patent: 6365462 (2002-04-01), Baliga
patent: 6548860 (2003-04-01), Hshieh et al.
patent: 6855593 (2005-02-01), Andoh et al.
patent: 2004/0075145 (2004-04-01), Shibib

Affiliated with

Also associated with

Rating

Trench polysilicon diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench polysilicon diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench polysilicon diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4059631